Name: FCP9N60N
Brand: ON Semiconductor
SKU: FCP9N60N
Price: 1.55000 USD
Availability: InStock

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FCP9N60N

Manufacturer part number:FCP9N60N

Manufacturer:ON Semiconductor

Description:FCP9N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCP9N60N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	83.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83.3W
Turn On Delay Time	12.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	385m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	8.7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10.2 ns
Turn-Off Delay Time	36.9 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	27A
Height	9.4mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FCP9N60N Product Details

FCP9N60N Description

SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power.