Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI4564DY-T1-GE3

SI4564DY-T1-GE3

SI4564DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 10A 8SOIC

SOT-23

SI4564DY-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 21mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation3.2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SI4564
Pin Count8
Number of Elements 2
Number of Channels 2
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time42 ns
Power - Max 3.1W 3.2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 855pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A 9.2A
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time40ns
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 15 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 800 mV
Height 1.75mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6204 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SI4564DY-T1-GE3

The SI4564DY-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N/P-CH 40V 10A 8SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4564DY-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News