Name: FDMC86160
Brand: ON Semiconductor
SKU: FDMC86160
Price: 2.61000 USD
Availability: InStock

new-10%

FDMC86160

Manufacturer part number:FDMC86160

Manufacturer:ON Semiconductor

Description:FDMC86160 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC86160 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 15 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	152.7mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 54W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	54W
Case Connection	DRAIN
Turn On Delay Time	9.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 50V
Current - Continuous Drain (Id) @ 25°C	9A Ta 43A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	3.6ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	43A
Threshold Voltage	2.9V
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	50A
Height	750μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDMC86160 Product Details

FDMC86160 MOSFET Description

The FDMC86160N-Channel MOSFET features low on-resistance for sufficient current flow and adequate power savings. For switching performance, the FDMC86160 has a low gate charge (22 nc at top); besides, this MOSFET has a maximum turn-on delay time of 19 ns and the maximum rise time is specified as 10 ns.