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NTD6416ANT4G

NTD6416ANT4G

NTD6416ANT4G

ON Semiconductor

NTD6416ANT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD6416ANT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation71W
Case Connection DRAIN
Turn On Delay Time9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 81m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time22ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 62A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5535 items

Pricing & Ordering

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NTD6416ANT4G Product Details

NTD6416ANT4G Description


The NTD6416ANT4G is an N-channel Power MOSFET offering 100V drain source voltage and 17A continuous drain current. The onsemi NTD6416ANT4G can be applied in motor control and UPS Inverter due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NTD6416ANT4G is in the TO-252-3 package with 71W power dissipation.



NTD6416ANT4G Features


  • Low RDS(on)

  • High Current Capability

  • 100% Avalanche Tested

  • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

  • AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and are RoHS Compliant



NTD6416ANT4G Applications


  • Motor Starters

  • Reduced Voltage Starters

  • Adjustable-Speed Drives

  • Intelligent Controllers

  • Servo Controllers

  • Power Management

  • Industrial


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