FDMC86102LZ Description
This N-Channel logic Level MOSFET is made with the sophisticated PowerTrench? process, which includes Shielded Gate technology. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.
FDMC86102LZ Features
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
HBM ESD protection level > 6 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
FDMC86102LZ Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
