STW28N65M2

Name: STW28N65M2
Brand: STMicroelectronics
SKU: STW28N65M2
Price: 4.48000 USD
Availability: InStock

new-10%

Manufacturer part number:STW28N65M2

Manufacturer:STMicroelectronics

Description:STW28N65M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW28N65M2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ M2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW28N
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	13.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.18Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	760 mJ
Height	20.15mm
Length	15.75mm
Width	5.15mm
RoHS Status	ROHS3 Compliant