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BSS123-7-F

BSS123-7-F

BSS123-7-F

Diodes Incorporated

BSS123-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

BSS123-7-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 6Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating170mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 300mW Ta
Element ConfigurationSingle
Current 15A
Operating ModeENHANCEMENT MODE
Power Dissipation300mW
Turn On Delay Time8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 170mA
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.4 V
Feedback Cap-Max (Crss) 6 pF
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:26639 items

Pricing & Ordering

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BSS123-7-F Product Details

BSS123-7-F Overview


A device's maximal input capacitance is 60pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 170mA. When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.1.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

BSS123-7-F Features


a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
a threshold voltage of 1.4V

BSS123-7-F Applications


There are a lot of Diodes Incorporated BSS123-7-F applications of single MOSFETs transistors.

  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • AC-DC Power Supply
  • Micro Solar Inverter
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification
  • Lighting, Server, Telecom and UPS.
  • Lighting
  • DC-to-DC converters
  • Motor control
  • Motor Drives and Uninterruptible Power Supples

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