FDMC610P Description
FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC610P Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge boost efficiency
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
RoHS Compliant
FDMC610P Applications
