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IXTY1N120P

IXTY1N120P

IXTY1N120P

IXYS

MOSFET N-CH 1200V 1A TO-252

SOT-23

IXTY1N120P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PackagingTube
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Operating Temperature (Max) 150°C
Configuration Single
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 1A Tc
Drain to Source Voltage (Vdss) 1200V
Continuous Drain Current (ID) 1A
Drain Current-Max (Abs) (ID) 1A
Power Dissipation-Max (Abs) 63W
RoHS StatusROHS3 Compliant
In-Stock:2469 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.084411$14.084411
10$13.287180$132.8718
100$12.535075$1253.5075
500$11.825542$5912.771
1000$11.156172$11156.172

About IXTY1N120P

The IXTY1N120P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1200V 1A TO-252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTY1N120P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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