FDMC3612 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC3612 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
180mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.3W Ta 35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
7.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
110m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
880pF @ 50V
Current - Continuous Drain (Id) @ 25°C
3.3A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
2.8ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
3.3A
Threshold Voltage
2.5V
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
32 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.5 V
Height
800μm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5770 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.697798
$0.697798
10
$0.658300
$6.583
100
$0.621037
$62.1037
500
$0.585884
$292.942
1000
$0.552721
$552.721
FDMC3612 Product Details
FDMC3612 Description
The FDMC3612 N-Channel MOSFET is made with ON Semiconductor's innovative Power Trench? technology, which has been specifically optimized to reduce on-state resistance while maintaining excellent switching performance.
FDMC3612 Features
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC3612 Applications
DC - DC Conversion
PSE Switch
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