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FCH20N60

FCH20N60

FCH20N60

ON Semiconductor

FCH20N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCH20N60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating20A
Number of Elements 1
Power Dissipation-Max 208W Tc
Element ConfigurationSingle
Power Dissipation208W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3119 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.65000$2.65
500$2.6235$1311.75
1000$2.597$2597
1500$2.5705$3855.75
2000$2.544$5088
2500$2.5175$6293.75

FCH20N60 Product Details

FCH20N60 Description


SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.



FCH20N60 Features


  • 650V @TJ = 150 °C

  • Typ. Rds(on) = 0.15 Ω

  • Ultra low gate charge (typ. Qg=55nC)

  • Low effective output capacitance (typ. Coss.eff = 110pF)

  • 100% avalanche tested

  • RoHS Compliant

  • Lead Free



FCH20N60 Applications


  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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