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FDH44N50

FDH44N50

FDH44N50

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 22A, 10V ±30V 5335pF @ 25V 108nC @ 10V TO-247-3

SOT-23

FDH44N50 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating44A
Number of Elements 1
Power Dissipation-Max 750W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation750W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5335pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Rise Time84ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 79 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 3.15V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Nominal Vgs 3.15 V
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1089 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$58.378392$58.378392
10$55.073955$550.73955
100$51.956561$5195.6561
500$49.015624$24507.812
1000$46.241155$46241.155

FDH44N50 Product Details

FDH44N50 Description

FDH44N50 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDH44N50 datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDH44N50 is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

FDH44N50 Features

Improved Gate, avalanche and high reapplied dv/dt ruggedness

Low gate charge Qg results in simple drive requirement

Reduced RDS(on)

Improved switching speed with low EMI

Reduced Miller capacitance and low Input capacitance

FDH44N50 Applications

Power factor correction

Electronic lamp ballasts

Flat panel display

TV power

ATX


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