Name: STW9N150
Brand: STMicroelectronics
SKU: STW9N150
Price: 12.99000 USD
Availability: InStock

new

STW9N150

Manufacturer part number:STW9N150

Manufacturer:STMicroelectronics

Description:STW9N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW9N150 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2.5Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW9N
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	320W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	320W
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3255pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	89.3nC @ 10V
Rise Time	14.7ns
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	1.5kV
Avalanche Energy Rating (Eas)	720 mJ
Max Junction Temperature (Tj)	150°C
Height	24.45mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW9N150 Product Details

STW9N150 Description

With a voltage of 1500V, the STW9N150 is an extremely high voltage Power MESHTM Power MOSFET from STMicroelectronics. STMicroelectronics has designed an improved family of Power MOSFETs with remarkable performance using the well-consolidated high voltage MESH OVERLAYTM technology. The company's innovative edge termination structure, together with the enhanced layout, results in the lowest RDS(on) per area, as well as unrivaled gate charge and switching characteristics.