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2N7002LT1G

2N7002LT1G

2N7002LT1G

ON Semiconductor

2N7002LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2N7002LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 7.5Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating115mA
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 225mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation225mW
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Tc
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 5 pF
Height 1.11mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:28293 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.046262$0.046262
500$0.034016$17.008
1000$0.028347$28.347
2000$0.026006$52.012
5000$0.024305$121.525
10000$0.022609$226.09
15000$0.021866$327.99
50000$0.021500$1075

2N7002LT1G Product Details

2N7002LT1G Description


The 2N7002LT1G is a 60V N-channel tiny signal MOSFET with a power dissipation of 300mW and a drain current of 115mA.


2N7002LT1G Features


? AECQ101 qualified and PPAP capable 2V prefix for automotive and other applications requiring unique site and control change requirements (2V7002L)

? These products are lead-free, halogen-free, and RoHS compliant.


2N7002LT1G Applications


Industrial


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