Name: IPB017N10N5LFATMA1
Brand: Infineon Technologies
SKU: IPB017N10N5LFATMA1
Price: 10.33000 USD
Availability: InStock

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IPB017N10N5LFATMA1

Manufacturer part number:IPB017N10N5LFATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.7m Ω @ 100A, 10V ±20V 840pF @ 50V 195nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)

Case Package:SOT-23

Datasheet:IPB017N10N5LFATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™-5
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	313W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	313W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4.1V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	128 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	720A
Avalanche Energy Rating (Eas)	979 mJ
Max Junction Temperature (Tj)	150°C
Height	4.5mm
RoHS Status	ROHS3 Compliant

IPB017N10N5LFATMA1 Product Details

IPB017N10N5LFATMA1 Description

Infineon Technologies produces the MOSFET IPB017N10N5LFATMA1. This Infineon OptiMOS MOSFET combines a trench MOSFET's state-of-the-art R DS(on) with a traditional planar MOSFET's large safe working area. It's perfect for applications like hot-swap and e-fuse.