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FDG6335N

FDG6335N

FDG6335N

ON Semiconductor

FDG6335N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDG6335N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 300MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation300mW
Terminal FormGULL WING
Current Rating700mA
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation300mW
Turn On Delay Time5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time7ns
Fall Time (Typ) 7 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 700mA
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2mm
Width 1.25mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12998 items

Pricing & Ordering

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FDG6335N Product Details

FDG6335N Description


With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Its application in compact switching regulators has been refined, offering very low Rds(on) and gate charge (QG) in a small size.



FDG6335N Features


?Low gate charge (typically 1.1 nC)


?High-performance trenching for incredibly low Rds(on)


?SC70-6 surface mount package, compact industry standard



FDG6335N Applications


Converter for DC/DC


Management of power


?Loadswitch


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