FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features
Q1 N-Channel
Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A
Q2 N-Channel
Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8013S Applications
Distribution
Other Wired Communications
Computing
Communications
General Purpose Point of Load
