STL36DN6F7 Description
This dual N-channel power MOSFET uses STripFET F7 technology and an enhanced groove gate structure to achieve extremely low on-resistance, while reducing internal capacitance and gate charge to achieve faster and more efficient switches.
STL36DN6F7 Features
?¤ Among the lowest RDS(on) on the market
?¤ Excellent figure of merit (FoM)
?¤ Low Crss/Ciss ratio for EMI immunity
?¤ High avalanche ruggedness
STL36DN6F7 Applications
?¤ Switching applications
