FDG6318PZ Description
These dual P-channel logic level enhancement modes MOSFET are tailor-made to minimize on-resistance. The device is specially designed for bipolar digital transistors and small signal MOSFET.
FDG6318PZ Features
-0.5A, -20V
RDS(ON) = 780 mΩ @ VGS = -4.5V
RDS(ON) = 1200 mΩ @ VGS = -2.5V
Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(TH) < 1.5V).
Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model).
Compact industry standard SC-70-6 surface mountpackage.
FDG6318PZ Applications
This product is general usage and suitable for many different applications.
