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EPC2102ENGRT

EPC2102ENGRT

EPC2102ENGRT

EPC

GANFET 2 N-CHANNEL 60V 23A DIE

SOT-23

EPC2102ENGRT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Series eGaN®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V
Current - Continuous Drain (Id) @ 25°C 23A Tj
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
RoHS StatusROHS3 Compliant
In-Stock:4513 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$4.74300$2371.5

About EPC2102ENGRT

The EPC2102ENGRT from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features GANFET 2 N-CHANNEL 60V 23A DIE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2102ENGRT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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