FDMD8530 Description
The device includes two 30V N-channel MOSFET in a dual power supply (5 Mm X 6 Mm) package. HS source and LS drain internal connection for half / full bridge, low source inductor packaging, low RDS (on) / QG and FOM silicon.
FDMD8530 Features
Q1: N-Channel
Max rDS(on) = 1.25 m|? at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.5 m|? at VGS = 4.5 V, ID = 32 A
Q2: N-Channel
Max rDS(on) = 1.25 m|? at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.5 m|? at VGS = 4.5 V, ID = 32 A
Ideal for Flexible Layout in Primary Side of Bridge Topology
100% UIL Tested
Kelvin High Side MOSFET Drive Pin-out Capability
RoHS Compliant
FDMD8530 Applications
This product is general usage and suitable for many different applications.
