FDG6308P Description
This P-channel 1.8V dedicated MOSFET uses advanced low-voltage power trench technology. It has been optimized for battery power management applications.
FDG6308P Features
–0.6 A, –20 V.
RDS(ON)= 0.40Ω @ VGS = –4.5 V
RDS(ON) = 0.55Ω @ VGS = –2.5 V
RDS(ON) = 0.80Ω @ VGS = –1.8 V
Low gate charge
High performance trench technology for extremelylow RDS(ON)
Compact industry standard SC70-6 surface mountpackage
FDG6308P Applications
This product is general usage and suitable for many different applications.
