FDME1034CZT Description
The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1034CZT Features
Q1: N?Channel
? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A
? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A
? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A
? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A
Q2: P?Channel
? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A
? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A
? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A
? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A
? Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
? Free from Halogenated Compounds and Antimony Oxides
? HBM ESD Protection Level > 1600 V (Note 3)
? This Device is Pb?Free and is RoHS Compliant
FDME1034CZT Applications
? DC?DC Conversion
? Level Shifted Load Switch
