Name: FDMS3669S
Brand: ON Semiconductor
SKU: FDMS3669S
Price: 1.54000 USD
Availability: InStock

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FDMS3669S

Manufacturer part number:FDMS3669S

Manufacturer:ON Semiconductor

Description:FDMS3669S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS3669S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	171mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.5W
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	1W
FET Type	2 N-Channel (Dual) Asymmetrical
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A 18A
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	3ns
Fall Time (Typ)	3 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	55 pF
Height	1.1mm
Length	5mm
Width	5.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

FDMS3669S Product Details

FDMS3669S Description

In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.

FDMS3669S Features

Maximum rDS(on) at VGS = 10 V, ID = 18 A is 5 m.
Max rDS(on) is 5.2 m at 4.5 V and 17 A.
Shorter rise/fall times due to low inductance packing reduce switching losses.
The best architecture for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
Conforms to RoHS