FDFS2P102 Discription
FDFS2P102 is a Integrated P-Channel MOSFET and Schottky Diode. SBD is named after its inventor, Dr. Schottky, and Schottky is an acronym for Schottky barrier diode. SBD is not made using the principle of forming PN junctions between P-type semiconductors and N-type semiconductors, but using the metal-semiconductor principle formed by the contact between metals and semiconductors.
FDFS2P102 Features
·-3.3 A,-20 V RDS(ON)=0.125 @VGs=-10V
RDS(ON)=0.200 @VGs=-4.5 V
VF<[email protected](TJ=125oC) VF<[email protected] VF<0.58V @2A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility.
FDFS2P102 Applications
DC/DC converters
Load Switch
Motor Drives
