STB100N6F7 is an N-channel power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. With an improved trench gate structure and STripFETTM F7 technology, this N-channel Power MOSFET has an extremely low onstate resistance and lower internal capacitance and gate charge for quicker and more effective switching.
STB100N6F7 Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
STB100N6F7 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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