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SCT30N120H

SCT30N120H

SCT30N120H

STMicroelectronics

PTD WBG & POWER RF

SOT-23

SCT30N120H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~200°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 270W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
In-Stock:334 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$24.51000$24.51
500$24.2649$12132.45
1000$24.0198$24019.8
1500$23.7747$35662.05
2000$23.5296$47059.2
2500$23.2845$58211.25

About SCT30N120H

The SCT30N120H from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features PTD WBG & POWER RF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SCT30N120H, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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