Name: FDD8447L
Brand: ON Semiconductor
SKU: FDD8447L
Price: 1.03000 USD
Availability: InStock

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FDD8447L

Manufacturer part number:FDD8447L

Manufacturer:ON Semiconductor

Description:FDD8447L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD8447L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	8.5MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	54A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.1W Ta 44W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1970pF @ 20V
Current - Continuous Drain (Id) @ 25°C	15.2A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	15.2A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Nominal Vgs	1.9 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDD8447L Product Details

FDD8447L Description

FDD8447L N Channel MOSFET is created using a sophisticated PowerTrench process. FDD8447L MOSFET was specifically developed to decrease the resistance to on-state. FDD8447L circuit is maintaining the highest quality and switching capabilities required for industrial applications.