FQPF6N60C Description
Fairchild's unique planar stripe, DMOS technology is used to make these N-Channel enhancement mode power field effect transistors.
In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high energy pulses. These devices are ideal for high-efficiency switched-mode power supply, active power factor correction, and half-bridge electronic light ballasts.
FQPF6N60C Features
?5.5A, 600V, 2.0Q RDS(on) @VGS -10 V
?Low entry fee (typical 16 nC)
?Extremely Low Crss (typical 7 pF)
?Quick swapping
?Avalanche-proofed to the nth degree
?Dv/dt capability has been improved.
FQPF6N60C Applications
Switching applications
