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TPH2R506PL,L1Q

TPH2R506PL,L1Q

TPH2R506PL,L1Q

Toshiba Semiconductor and Storage

X35 Pb-F Power Mosfet Transistor Sop8-Adv Pd=78W F=1Mhz Rohs Compliant: Yes

SOT-23

TPH2R506PL,L1Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature175°C TJ
PackagingTape & Reel (TR)
Published 2016
Series U-MOSIX-H
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 132W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 30A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:5166 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About TPH2R506PL,L1Q

The TPH2R506PL,L1Q from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features X35 Pb-F Power Mosfet Transistor Sop8-Adv Pd=78W F=1Mhz Rohs Compliant: Yes.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TPH2R506PL,L1Q, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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