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NTHD4102PT1G

NTHD4102PT1G

NTHD4102PT1G

ON Semiconductor

NTHD4102PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTHD4102PT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface MountYES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 64MOhm
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation1.1W
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
Current Rating-7.3A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTHD4102P
Pin Count8
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.1W
Turn On Delay Time5.5 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.9A
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Rise Time12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.5 V
Height 1.1mm
Length 3.1mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8567 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
500$0.9603$480.15
1000$0.9506$950.6
1500$0.9409$1411.35
2000$0.9312$1862.4
2500$0.9215$2303.75

NTHD4102PT1G Product Details

NTHD4102PT1G Description


P-channel MOSFETNTHD4102PT1G is composed of P-channel, and P-channel is composed of most hole current carriers. The gate terminal is made of N-type material. Depending on the number and type of voltage (negative or positive), determine how the transistor works and whether it is turned on or off.


NTHD4102PT1G Features


? Offers an Ultra Low RDS(ON) Solution in the ChipFET Package

? Miniature ChipFET Package 40% Smaller Footprint than TSOP?6

? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

? Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

? Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

? Pb?Free Package is Available


NTHD4102PT1G Applications


? Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, and PDAs

? Charge Control in Battery Chargers

? Buck and Boost Converters



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