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FDA75N28

FDA75N28

FDA75N28

ON Semiconductor

FDA75N28 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDA75N28 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series UniFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 520W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 41mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 144nC @ 10V
Drain to Source Voltage (Vdss) 280V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3658 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.671015$2.671015
10$2.519826$25.19826
100$2.377194$237.7194
500$2.242636$1121.318
1000$2.115695$2115.695

FDA75N28 Product Details

FDA75N28 Description


FDA75N28 is a 280V N-Channel MOSFET. The N-Channel MOSFET FDA75N28 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The advanced technology FDA75N28 has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The onsemi FDA75N28 is well suited for high efficient switched-mode power supplies and active power factor correction.



FDA75N28 Features


  • 75A, 280V, RDS(on) = 0.041? @VGS = 10 V

  • Low gate charge ( typical 111 nC)

  • Low Crss ( typical 90 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability



FDA75N28 Applications


  • Personal computer

  • Mobile phone chargers

  • DC to DC conversion

  • lighting

  • telecommunications racks


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