Name: IRFP4710PBF
Brand: Infineon Technologies
SKU: IRFP4710PBF
Price: 2.67000 USD
Availability: InStock

new-10%

IRFP4710PBF

Manufacturer part number:IRFP4710PBF

Manufacturer:Infineon Technologies

Description:IRFP4710PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP4710PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	14Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	72A
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	72A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	72A
Threshold Voltage	5.5V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Recovery Time	110 ns
Nominal Vgs	5.5 V
Height	20.2946mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFP4710PBF Product Details

IRFP4710PBF Description

IRFP4710PBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRFP4710PBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRFP4710PBF has the common source configuration.

IRFP4710PBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRFP4710PBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display