HUFA75307T3ST datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
HUFA75307T3ST Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Series
Automotive, AEC-Q101, UltraFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
2.6A
Number of Elements
1
Power Dissipation-Max
1.1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.1W
Case Connection
DRAIN
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
17nC @ 20V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
2.6A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.09Ohm
Drain to Source Breakdown Voltage
55V
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:33944 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.23000
$0.23
500
$0.2277
$113.85
1000
$0.2254
$225.4
1500
$0.2231
$334.65
2000
$0.2208
$441.6
2500
$0.2185
$546.25
HUFA75307T3ST Product Details
HUFA75307T3ST Description
HUFA75307T3ST is a 55v N-channel UltraFET Power MOSFET. This N-Channel power MOSFET HUFA75307T3ST is manufactured using the innovative [email protected] process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This HUFA75307T3ST is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUFA75307T3ST Features
2.6A, 55V
Ultra Low On-Resistance, rDS(ON) = 0.090|?
Diode Exhibits Both High Speed and Soft Recovery
Temperature Compensating PSPICE?Model
Thermal Impedance SPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
HUFA75307T3ST Applications
Switching regulators
Switching converters
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable and battery-operated products
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