Name: IPB019N06L3GATMA1
Brand: Infineon Technologies
SKU: IPB019N06L3GATMA1
Price: 3.91000 USD
Availability: InStock

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IPB019N06L3GATMA1

Manufacturer part number:IPB019N06L3GATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB019N06L3GATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-TO-263-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 196μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	166nC @ 4.5V
Rise Time	79ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	131 ns
Continuous Drain Current (ID)	120A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Max Junction Temperature (Tj)	175°C
Height	4.57mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPB019N06L3GATMA1

The IPB019N06L3GATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB019N06L3GATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.