Name: FCH47N60F
Brand: ON Semiconductor
SKU: FCH47N60F
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	SuperFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Base Part Number	FCH47N60
Power Dissipation-Max	417W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	73m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	47A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

FCH47N60F Product Details

FCH47N60F Description

SUPERFIT MOSFET is ON Semiconductor?ˉs first generation of high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance,dv/dt rate, and higher avalanche energy. Consequently, SUPERFIT MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SUPERFIT FRFET MOSFET?ˉs optimized body diode reverse recovery performance can remove additional components and improve system reliability.