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IPB04N03LB G

IPB04N03LB G

IPB04N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

SOT-23

IPB04N03LB G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 107W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 5203pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:4283 items

About IPB04N03LB G

The IPB04N03LB G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 80A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB04N03LB G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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