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FDI3652

FDI3652

FDI3652

ON Semiconductor

Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-262AA Rail

SOT-23

FDI3652 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2003
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta 61A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:3074 items

About FDI3652

The FDI3652 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-262AA Rail.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDI3652, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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