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FCPF850N80Z

FCPF850N80Z

FCPF850N80Z

ON Semiconductor

FCPF850N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCPF850N80Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2017
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 28.4W Tc
Element ConfigurationSingle
Turn On Delay Time16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 1315pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 800V
Height 16.07mm
Length 10.36mm
Width 4.9mm
RoHS StatusROHS3 Compliant
In-Stock:5841 items

Pricing & Ordering

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FCPF850N80Z Product Details

FCPF850N80Z Description


FCPF850N80Z is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it is able to provide outstanding low on?resistance and lower gate charge performance, minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Over 2kV HBM surge stress can be withstood based on the internal gate-source ESD diode.



FCPF850N80Z Features


  • Advanced charge balance technology

  • Low effective output capacitance

  • Lower gate charge

  • ESD improved capability

  • Available in the TO-220F package



FCPF850N80Z Applications


  • AC-DC power supply

  • LED lighting


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