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FDP2670

FDP2670

FDP2670

ON Semiconductor

MOSFET N-CH 200V 19A TO-220AB

SOT-23

FDP2670 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature-65°C~175°C TJ
PackagingTube
Published 2001
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 93W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:5790 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.204470$1.20447
10$1.136292$11.36292
100$1.071974$107.1974
500$1.011296$505.648
1000$0.954053$954.053

About FDP2670

The FDP2670 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 19A TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDP2670, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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