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FCB199N65S3

FCB199N65S3

FCB199N65S3

ON Semiconductor

FCB199N65S3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCB199N65S3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series SuperFET® III
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 98W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.4mA
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 400V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.199Ohm
Pulsed Drain Current-Max (IDM) 35A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 76 mJ
RoHS StatusRoHS Compliant
In-Stock:2148 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$1.29708$1037.664

FCB199N65S3 Product Details

FCB199N65S3 Description


The SUPERFIT III MOSFET is a new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This cutting-edge technology is designed to reduce conduction loss, improve switching performance, and sustain high dv/dt rates. As a result, the SUPERFIT III MOSFET is well suited to various power system downsizing and efficiency gains.



FCB199N65S3 Features


  • 700 V @ TJ = 150°C

  • Typ. RDS(on) = 170 m

  • Ultra Low Gate Charge (Typ. Qg = 30 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

  • 100% Avalanche Tested

  • These Devices are Pb?Free and are RoHS Compliant



FCB199N65S3 Applications


  • Telecom / Server Power Supplies

  • Industrial Power Supplies

  • UPS / Solar


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