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STP33N60M6

STP33N60M6

STP33N60M6

STMicroelectronics

MOSFET (Metal Oxide) N-Channel 125m Ω @ 12.5A, 10V ±25V 1515pF @ 100V 33.4nC @ 10V 600V TO-220-3

SOT-23

STP33N60M6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
Series MDmesh™ M6
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Base Part Number STP33N
Power Dissipation-Max 190W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1515pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 33.4nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
RoHS StatusROHS3 Compliant
In-Stock:1485 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.17000$5.17
10$4.64500$46.45
100$3.86310$386.31
500$3.18528$1592.64

STP33N60M6 Product Details

STP33N60M6 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 100V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

STP33N60M6 Features


a 600V drain to source voltage (Vdss)


STP33N60M6 Applications


There are a lot of STMicroelectronics
STP33N60M6 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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