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BU806

BU806

BU806

ON Semiconductor

BU806 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BU806 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BU806
Power - Max 60W
Transistor Type NPN - Darlington
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 5A
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 8A
In-Stock:2575 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$1.24094$992.752

BU806 Product Details

BU806 Overview


As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 5A.Product comes in TO-220-3 supplier package.Single BJT transistor shows a 200V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BU806 Features


the vce saturation(Max) is 1.5V @ 50mA, 5A
the supplier device package of TO-220-3

BU806 Applications


There are a lot of ON Semiconductor BU806 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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