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BDW24TU

BDW24TU

BDW24TU

ON Semiconductor

BDW24TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW24TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW24
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 6A
In-Stock:2541 items

BDW24TU Product Details

BDW24TU Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 60mA, 6A.Product package TO-220-3 comes from the supplier.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BDW24TU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3

BDW24TU Applications


There are a lot of ON Semiconductor BDW24TU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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