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BD243A

BD243A

BD243A

ON Semiconductor

BD243A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD243A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code unknown
Base Part Number BD243
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 65W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 6A
Transition Frequency 2MHz
VCEsat-Max 1.5 V
Power Dissipation Ambient-Max 65W
In-Stock:2450 items

BD243A Product Details

BD243A Overview


This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 6A.As a result, the part has a transition frequency of 2MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

BD243A Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
a transition frequency of 2MHz

BD243A Applications


There are a lot of ON Semiconductor BD243A applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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