MPSA93RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 400mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.In the part, the transition frequency is 50MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA93RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 400mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA93RLRMG Applications
There are a lot of ON Semiconductor MPSA93RLRMG applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
