BC847CT,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.In this part, there is a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC847CT,115 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847CT,115 Applications
There are a lot of NXP USA Inc. BC847CT,115 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting