BC858W,135 Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC858W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,135 Applications
There are a lot of Nexperia USA Inc. BC858W,135 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter