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BC858W,135

BC858W,135

BC858W,135

Nexperia USA Inc.

BC858W,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC858W,135 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC858
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Collector-Base Capacitance-Max 5pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:431247 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.086496$0.086496
500$0.063600$31.8
1000$0.053000$53
2000$0.048624$97.248
5000$0.045443$227.215
10000$0.042272$422.72
15000$0.040882$613.23
50000$0.040199$2009.95

BC858W,135 Product Details

BC858W,135 Overview


In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

BC858W,135 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC858W,135 Applications


There are a lot of Nexperia USA Inc. BC858W,135 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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