BC858ALT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 100MHz.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor BC858ALT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
