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BC850AMTF

BC850AMTF

BC850AMTF

ON Semiconductor

BC850AMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC850AMTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLOW NOISE
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation310mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating100mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC850
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation310mW
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage200mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 110
Height 930μm
Length 2.92mm
Width 1.3mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:390737 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.076169$0.076169
500$0.056006$28.003
1000$0.046672$46.672
2000$0.042818$85.636
5000$0.040017$200.085
10000$0.037226$372.26
15000$0.036001$540.015
50000$0.035399$1769.95

BC850AMTF Product Details

BC850AMTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.A transition frequency of 300MHz is present in the part.Single BJT transistor can be broken down at a voltage of 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC850AMTF Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC850AMTF Applications


There are a lot of ON Semiconductor BC850AMTF applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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